吴曙翔

个人基本简介: 

职  称: 副教授
学  位: 博士
毕业学校: 中山大学
联系电话: 020-84113394
电子邮件: wushx3@mail.sysu.edu.cn

主要经历: 

2004-2009年:中山大学 物理科学与工程技术学院,硕博连读;

2009-2011年:新加坡南洋理工大学,博士后;

2011-至今:中山大学 物理科学与工程技术学院

学科方向: 

(1)非挥发性信息存储研究
(2)强关联功能氧化物薄膜(如LaAlO3/SrTiO3二维电子气)输运性质及器件制备

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随着大数据时代的到来,数据将如能源、材料一样,成为战略性资源,视为“未来的新石油”。作为数据载体的非挥发性存储器是大数据时代的基石,其最大优点是,无电源供应时信息能长时间保存,比如,我们常用的U盘、相机SD卡都属于非挥发性存储器。随着数字化信息技术的飞速发展,智能手表、手机、平板电脑、数码相机等便携式电子设备呈爆炸式增长,人们对非挥发性存储的容量、速度等要求越来越高。探索新材料和进一步开发一种全新的下一代信息存储技术已成为半导体信息产业的迫切需求。氧化物薄膜器件电子学是继半导体存储技术后的新发展方向,是信息存储领域的研究热点。本研究组长期从事非挥发性信息存储研究,在场效应FET器件、阻变存储等领域完成了一定创新性工作,相关成果发表在Nature旗下期刊《NPG Asia Materials》、《Physical Review X》、《ACS Applied Materials&Interfaces》等SCI论文40余篇。

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招收专职科研人员、博士后和研究生,欢迎优秀本科生提前进入实验室学习。

代表论著: 

第一/通讯作者代表作:

1. Shuxiang Wu, Guangheng Wu, Jian Qing, Xiang Zhou,Dinghua Bao, Guowei Yang, and Shuwei Li, Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures, NPG Asia Materials 5, e56 (2013).(一区,IF=10.1)
2. Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, and Tom Wu, Nonvolatile Resistive Switching in Pt/LaAlO3/SrTiO3 Heterostructures,Physical Review X 3, 041027 (2013).(一区,IF=9.0)

3. Shuxiang Wu, Lizhu Ren, Jian Qing, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Xiang Zhou, and Shuwei Li, Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3,ACS Applied Materials & Interfaces 6, 8575 (2014). (一区,IF=6.7)

4. M. Meng,Shuxiang Wu* ,L. Z. Ren, W. Q. Zhou, Y. J. Wang, G. L. Wang,and S. W. Li*, Extrinsic anomalous Hall effect in epita- xial Mn4N films, Applied Physics Letters, 106, 032407 (2015).

5. Meng Meng,Shuxiang Wu*,Wenqi Zhou, Lizhu Ren, Yunjia Wang, G. L. Wang, and Shuwei Li*,Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn4−xDyxN films, Journal of Applied Physics, ISSN:0021-8979,118, 053911 (2015).

6. Meng Meng ,Shuxiang Wu*,Lizhu Ren, Wenqi Zhou, Yunjia Wang, G. L. Wang, and Shuwei Li*, Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn2N0.86 films, Journal of Applied Physics, 116, 17,173911(2014).

7. Shuxiang Wu,Xinman Chen, Lizhu Ren, Wei Hu, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Dinghua Bao, and Shuwei Li, Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices, Journal of Applied Physics 116, 074515 (2014). (IF=2.2)

8. Shuxiang Wu and Shuwei Li, Light-Induced Giant Capacitance Enhancement in LaAlO3/SrTiO3 Heterostructures, Nanoscience and Nanotechnology Letters 6, 565 (2014).(IF=1.4)
9. Shuxiang Wu, Lizhu Ren, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Shuwei Li,Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor, Applied Physics A, 116, 1741 (2014) (IF=1.7)

10. Shuxiang Wu, Haiyang Peng, and Tom Wu, Concurrent nonvolatile resistance and capacitance switching in LaAlO3, Applied Physics letters 98, 093503(2011). (IF=3.5)
11. Shuxiang Wu, Xingyu Li, Xiangjun Xing, Ping Hu, Yunpeng Yu, and Shuwei Li, Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device, Applied Physics Letter 94, 253504 (2009) (IF=3.5)
12. Shuxiang Wu, L. M. Xu, X. J. Xing, S. M. Chen, Y. B. Yuan, Y. J. Liu, Y. P. Yu, X. Y. Li, and Shuwei Li,Reverse-bias-induced bipolar resistance switching in Pt/TiO2/SrTi0.99Nb0.01O3/Pt devices, Applied Physics Letter 93, 043502 (2008).(IF=3.5)
13. Shuxiang Wu, Y. Q. Xia, X. L. Yu, Y. J. Liu, and Shuwei Li, Magnetic properties of MnxTi1−xN thin films grown by plasma-assisted molecular beam epitaxy, Journal of Applied Physics 102, 063911 (2007). (IF=2.2)
14. Shuxiang Wu, Y. J. Liu, X. J. Xing, X. L. Yu, L. M. Xu, Y. P. Yu, and Shuwei Li, Journal of Applied Physics 103, 063517(2008). (IF=2.2)

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